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11/11/2010 irf6201pbf hexfet power mosfet pd - 97500a applications ? or-ing or hot-swap mosfet ? battery operated dc motor inverter mosfet ? system/load switch features and benefits note form quantit y irf6201pbf so8 tube/bulk 95 IRF6201TRPBF so8 ta p e and reel 4000 orderable part number package type standard pack
so-8 absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v a w c max. 27 22 110 12 20 -55 to + 150 2.5 0.02 1.6 www.irf.com 1 v ds 20 v r ds(on) max (@v gs = 4.5v) 2.45 m ? r ds(on) max (@v gs = 2.5v) 2.75 m ? q g (typical) 130 nc i d (@t a = 25c) 27 a features benefits low r dson ( 2.45m ? @ v g s = 4.5v ) lower conduction losses industry-standard so-8 packa g e multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen environmentally friendly results in ?
2 s d g notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle when mounted on 1 inch square copper board.

static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 4.6 ??? mv/c r ds(on) ??? 1.90 2.45 ??? 2.10 2.75 v gs(th) gate threshold voltage 0.5 ??? 1.1 v v ds = v gs , i d = 100a i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 130 195 q gs gate-to-source charge ??? 16 ??? q gd gate-to-drain charge ??? 60 ??? t d(on) turn-on delay time ??? 29 ??? t r rise time ??? 100 ??? t d(off) turn-off delay time ??? 320 ??? t f fall time ??? 265 ??? c iss input capacitance ??? 8555 ??? c oss output capacitance ??? 1735 ??? c rss reverse transfer capacitance ??? 1290 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 82 120 ns q rr reverse recovery charge ??? 180 270 nc thermal resistance parameter units r jl junction-to-drain lead r ja junction-to-ambient typ. ??? ??? c/w max. 20 50 static drain-to-source on-resistance a ??? ??? ??? ??? 2.5 110 na nc ns pf r g = 6.8 ? v ds = 16v, v gs = 0v, t j = 125c v dd = 20v, v gs = 4.5v i d = 1.0a v ds = 10v v gs = 12v v gs = -12v v gs = 4.5v m ? a t j = 25c, i f = 2.5a, v dd = 16v di/dt = 100/s t j = 25c, i s = 2.5a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = 22a v ds = 16v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 27a v gs = 2.5v, i d = 22a conditions see figs. 10a & 10b ? = 1.0mhz v gs = 0v v ds = 16v
www.irf.com fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 60s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.3v 60s pulse width tj = 150c vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v 0 1 2 3 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 27a v gs = 4.5v
4 fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc 0 50 100 150 200 250 300 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 22a
www.irf.com fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a )
1 0.1 % + - 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
6 fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 1 2 3 4 5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 27a t j = 25c t j = 125c 0 50 100 150 200 i d , drain current (a) 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 2.5v vgs = 4.5v q g q gs q gd v g charge
www.irf.com fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a 1e-08 1e-07 1e-06 1e-05 1e-04 1e-03 time (sec) 0 10000 20000 30000 40000 50000 60000 70000 80000 90000 p o w e r ( w )
8

dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/10 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. msl 1 (p er jedec j-std-020d ??? ) rohs compliant moisture sensitivity level so-8 yes qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines)

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